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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
DRAWING
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
OUTLINE
4-C2
FEATURES
High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band
24.0+/-0.6
2
10.0+/-0.3
9.6+/-0.3
3
R1.6+/-0.15
0.1 -0.01 4.5+/-0.7 6.2+/-0.7
+0.05
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
RD70HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter "G" after the Lot Marking.
3.3+/-0.2
RoHS COMPLIANT
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 150 10(Note2) 20 175 -40 to +175 1.0 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 20W
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=6W, Idq=2.0A f=520MHz ,VDD=12.5V Pin=10W, Idq=2.0A VDD=15.2V,Po=70W(PinControl) f=175MHz,Idq=2.0A,Zg=50 LoadVSWR=20:1(All phase) VDD=15.2V,Po=50W(PinControl) f=520MHz,Idq=2.0A,Zg=50 Load VSWR=20:1(All phase) MIN 1.3 70 55 50 50 LIMITS TYP MAX. 300 5 1.8 2.3 75 60 55 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
160 CHANNEL DISSIPATION Pch(W) 140 120
80 60 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A) Vds-Ids CHARACTERISTICS
Ta=+25C Vgs=3.7V
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgs(V)
Vds VS. Ciss CHARACTERISTICS 350 300 250 Ciss(pF)
Ta=+25C f=1MHz
10 8 6 4 2 0 0 2 4 6 Vds(V) 8 10
Ids(A)
Vgs=3.4V
200 150 100
Vgs=3.1V
Vgs=2.8V Vgs=2.5V Vgs=2.2V
50 0 0 5 10 Vds(V) 15 20
Vds VS. Coss CHARACTERISTICS 300 250 Coss(pF) 200 150 100 50 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 30 25 20 Crss(pF) 15 10 5 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD70HVF1
MITSUBISHI ELECTRIC
2/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Pin-Po CHARACTERISTICS @f=175MHz 100
Po
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25C f=175MHz Vdd=12.5V Idq=2A
100
Po
50 Po(dBm) , Gp(dB) , Idd(A) 40 30
100 80 80 Pout(W) , Idd(A)
80
d
Gp
d(%)
20 10 0 10 20 Pin(dBm) 30 40
40 20 0
40 20 0 0 2 4 6 Pin(W)
Ta=25C f=175MHz Vdd=12.5V Idq=2A Idd
40 20 0
8
10
Pin-Po CHARACTERISTICS @f=520MHz 50 40 30 20
Gp Ta=+25C f=520MHz Vdd=12.5V Idq=2A
Pin-Po CHARACTERISTICS @f=520MHz 100 70
Po
70 60
d
Po
Po(dBm) , Gp(dB) , Idd(A)
80
60 Pout(W) , Idd(A) 50 40 30 20
Idd Ta=25C f=520MHz Vdd=12.5V Idq=2A
50 d(%) Idd(A) 40 30 20 10 0
40 20 0 10 20 30 Pin(dBm) 40
10 0
d(%)
60
10 0 0 5 10 Pin(W) 15 20
Vdd-Po CHARACTERISTICS @f=175MHz 100 80 60
Idd Ta=25C f=175MHz Pin=6W Idq=2A Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS @f=520MHz 20 18 16 14 Idd(A) 10 8 6 4 2 0 Po(W) 12 60 50 40 30 20 10 4 6 8 10 Vdd(V) 12 14 70
Ta=25C f=520MHz Pin=10W Idq=2A Zg=ZI=50 ohm Po
12 10 8
Idd
Po(W)
6 4 2 0
40 20 0 4 6 8 10 Vdd(V) 12 14
RD70HVF1
d(%)
60
60
60
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2 10 8 6 4 2
-25C Vds=10V Tc=-25~+75C
+25C
Ids(A)
+75C
0 2 2.5 3 Vgs(V) 3.5 4
TEST CIRCUIT(f=175MHz)
Vgg C1 9.1kOHM L2 C3 Vdd
8.2kOHM 100pF 56pF RF-IN 100OHM 175MHz RD70HVF1 72pF L1 C2 0-20pF
56pF RF-OUT
56pF 0-20pF 18pF 35pF 20pF 0-20pF
10 21 43 138.5 165
100pF 37pF 10 20.5 41
8pF
150.5 190
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel
Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
L1:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:4Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire
RD70HVF1
MITSUBISHI ELECTRIC
4/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TEST CIRCUIT(f=520MHz)
Vgg C1 9.1kOHM L3 15pF
C3
8.2kOHM
100OHM L1 15pF 520MHz RD70HVF1 C2 L2
RF-IN 56pF
RF-OUT 56pF 0-10pF 22pF 15pF 5pF 0-10pF 5pF 40 45 70 80 100 15pF 15pF 8 18 38 88 100 5pF
12
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
RD70HVF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=10
f=135MHz Zout
f=175MHz Zout
f=175MHz Zin
f=135MHz Zin
Zin, Zout f (MHz) 135 175
Zin (ohm) 0.43-j3.19 0.55-j2.53
Zout (ohm) 0.70+j0.25 0.72-j0.36
Conditions Po=90W, Vdd=12.5V,Pin=6W Po=80W, Vdd=12.5V,Pin=6W
f=520MHz Zout
Zo=10
f=520MHz Zin
f=440MHz Zout
f=440MHz Zin
Zin, Zout f (MHz) 440 520
Zin (ohm) 0.74-j0.34 1.04+j0.63
Zout (ohm) 0.71-j0.18 0.93+j1.62
Conditions Po=60W, Vdd=12.5V,Pin=10W Po=55W, Vdd=12.5V,Pin=10W
RD70HVF1
MITSUBISHI ELECTRIC
6/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
S12 S22 (ang) -16.2 -30.9 -39.5 -44.3 -46.6 -46.5 -40.8 -23.4 38.2 73.6 75.6 75.3 69.2 74.3 79.3 75.4 76.7 77.1 72.6 72.1 74.4 72.7 (mag) 0.745 0.805 0.860 0.874 0.897 0.933 0.935 0.952 0.965 0.965 0.973 0.974 0.975 0.974 0.979 0.983 0.982 0.984 0.989 0.983 0.987 0.993 (ang) -170.3 -170.5 -173.3 -174.6 -175.6 -178.1 179.4 177.2 175.0 172.9 171.4 170.6 169.5 167.8 166.3 164.9 163.6 162.0 160.9 159.6 158.2 157.3 (mag) 0.013 0.011 0.008 0.007 0.006 0.004 0.002 0.001 0.002 0.003 0.003 0.003 0.004 0.005 0.007 0.007 0.007 0.009 0.009 0.010 0.011 0.011
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
RD70HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.885 0.906 0.930 0.939 0.946 0.957 0.967 0.969 0.976 0.974 0.980 0.978 0.980 0.980 0.982 0.985 0.982 0.982 0.984 0.983 0.984 0.985 (ang) -174.0 -176.8 -179.0 179.8 178.7 176.7 174.7 173.0 171.0 169.6 168.0 167.2 166.2 164.6 163.3 162.0 160.7 159.4 158.1 157.0 155.9 154.6 (mag) 8.441 3.713 2.095 1.647 1.337 0.908 0.661 0.495 0.378 0.316 0.276 0.247 0.216 0.176 0.156 0.126 0.108 0.106 0.107 0.078 0.079 0.067 S21 (ang) 72.4 55.3 41.2 35.9 32.3 24.8 19.4 13.6 12.2 5.4 2.3 0.9 -0.2 -1.5 -1.4 -3.3 -2.0 -1.1 -9.0 -13.4 -4.5 -5.3
RD70HVF1
MITSUBISHI ELECTRIC
7/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD70HVF1
MITSUBISHI ELECTRIC
8/8
10 Jan 2006

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